A Compact Model for SiGe Heterojunction Bipolar Transistor Under AC-Stress Conditions

Taeyeong Kim, Kyubeom Kang, Jongho Lee, Junhwa Jeong, Michael A. Oakley, Moon-Kyu Cho, John D. Cressler, Byunghun Lee, Ickhyun Song
May 2026 Journal Papers
DOI
Type
Journal article
Publication
Results in Physics, in press

Status: In press
Journal metrics: IF 4.6

SiGe HBT Compact Modeling AC Stress Device Reliability Heterojunction Bipolar Transistor
Byunghun Lee
Byunghun Lee
Associate Professor blee22@hanyang.ac.kr

Integrated circuits and systems for neural interfaces, wireless power and data transfer, neuromodulation, and bioelectronic systems.